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SMMBTA56LT3 PNP transistors(BJT) -80V -500mA/-0.5A 50MHz 100 -250mV/-0.25V SOT-23/SC-59 marking 2GM
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -80V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −80V |
集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
截止频率fT Transtion Frequency(fT) | 50MHz |
直流电流增益hFE DC Current Gain(hFE) | 100 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | -250mV/-0.25V |
耗散功率Pc PoWer Dissipation | 225mW/0.225W |
Description & Applications | Driver Transistors PNP Silicon Features • Pb−Free Package |
描述与应用 | 驱动晶体管PNP硅 特点 •无铅封装 |