Scavenging browsing Mobile
Hot Search: SSM3K35MFV SSM3J36MFV 2SK3376TT-B
Integrated Circuit(IC) NAND gate SN74AHCT1G00DCK3 SOT-353/SC70-5/SC-88A marking BAY
逻辑类型 Logic Type | 与非门 NAND Gate |
电路数 Number of Circuits | 1 |
输入数 Number of Inputs | 2 |
电源电压Vcc Voltage - Supply | 4.5V~5.5V |
静态电流Iq Current - Quiescent (Max) | 10uA |
输出高,低电平电流 Current - Output High, Low | -8mA,8mA |
低逻辑电平 Logic Level - Low | 0.8v |
高逻辑电平 Logic Level - High | 2v |
传播延迟时间@Vcc,CL Max Propagation Delay @ V, Max CL | 5.5ns @ 5V,50pF |
Description & Applications | SINGLE 2-INPUT POSITIVE-NAND GATE ;Operating Range of 4.5 V to 5.5 V Max tpd of 7.1 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V Inputs Are TTL-Voltage Compatible Latch-Up Performance Exceeds 250 mA Per JESD 17 ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) – 1000-V Charged-Device Model (C101) |
描述与应用 | 单路2输入正与非门;工作电压范围为4.5 V至5.5 V 最大5 V时为7.1 ns吨 低功耗,10μA最大ICC ±8 mA输出驱动在5 V 输入是TTL电压兼容 闭锁性能超过250 mA每 JESD17 ESD保护超过JESD22 - 2000-V人体模型(A114-A) - 200-V机型号(A115-A) - 1000-V带电器件模型(C101) |