Scavenging browsing Mobile
Hot Search: SSM3K35MFV SSM3J36MFV 2SK3376TT-B
Integrated Circuit(IC) NAND gate SN74AUC1G00DCKR SOT-353/SC70-5/SC-88A marking UAR
逻辑类型 Logic Type | 与非门 NAND Gate |
电路数 Number of Circuits | 1 |
输入数 Number of Inputs | 2 |
电源电压Vcc Voltage - Supply | 0.8v~2.7v |
静态电流Iq Current - Quiescent (Max) | 10uA |
输出高,低电平电流 Current - Output High, Low | -9mA,9mA |
低逻辑电平 Logic Level - Low | 0.7v |
高逻辑电平 Logic Level - High | 1.7V |
传播延迟时间@Vcc,CL Max Propagation Delay @ V, Max CL | 0.5nS @ 2.5v 30pF |
Description & Applications | SINGLE 2-INPUT POSITIVE NAND GATE ; Available in the Texas Instruments • Low Power Consumption, 10-µA Max I CC NanoFree™ Package • ±8-mA Output Drive at 1.8 V • Optimized for 1.8-V Operation and Is 3.6-V I/O • Latch-Up Performance Exceeds 100mA Per Tolerant to Support Mixed-Mode Signal JESD 78, Class II • ESD Protection Exceeds JESD 22 Ioff Supports Partial-Power-Down Mode – 2000-V Human-Body Model (A114-A) – 200-V Machine Model (A115-A) • Sub 1-V Operable – 1000-V Charged-Device Model (C101) • Max t pd of 2.2 ns at 1.8 V |
描述与应用 | 单路2输入正与非门; 德州仪器低功耗,10μA最大I CC NanoFree™包装•±8 mA输出驱动在1.8 V •1.8-V操作优化,并为3.6-VI/ O•闭锁性能超过100mA每 耐支持混合模式信号JESD78,II类 •ESD保护超过JESD22 IOFF支持部分掉电模式 - 2000-V人体模型(A114-A) - 200-V机型号(A115-A) •子1-V可操作 - 1000-V带电器件模型(C101) •最大t PD为2.2 ns在1.8 V |