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SP0610TE-6327 N沟道MOS场效应管 100V 1.7A 0.16ohm SOT-23 marking SSF small signal transistor

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-100V
最大栅源极电压Vgs(±)
Gate-Source Voltage		20V
最大漏极电流Id
Drain Current		-1.7A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.16Ω @1.7A,10V
开启电压Vgs（th）
Gate-Source Threshold Voltage		2.1-4V
耗散功率Pd
Power Dissipation		1.8W
Description & ApplicationsSIPMOS SMALL-SIGNAL TRANSISTOR N CHANNEL ENHANCEMENT MODE AVALANCHE RATED VGH(th)=2.1-4.0V
描述与应用SIPMOS小信号晶体管 N沟道 增强模式 额定雪崩 VGH（th）=2.1-4.0V
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