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L2SA812SLT1G PNP transistors（BJT） -60V -150mA/-0.15A 180MHz 270~560 -300mV/-0.3V SOT-23/SC-59 marking M7 high voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流IC Collector Current(IC) | −150mA/-0.15A |
| 截止频率fT Transtion Frequency(fT) | 180MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 270~560 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP epitaxial planar transistor General Purpose Transistors FEATURES High Voltage NPN complement: L2SC1623 We declare that the material of product compliance with RoHS requirements |
| 描述与应用 | PNP外延平面晶体管 通用晶体管 特点 高电压 NPN补充：L2SC1623 我们声明，对产品材料遵守RoHS要求 |
