Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
SSM3K09FU MOSFET N-Channel 20V 400mA/0.4A SOT-323/SC-70/USM marking DJ ESD protection/low on-resistance/fast switch
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 400mA/0.4A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.8Ω/Ohm @200mA,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6-1.1V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications High Speed Switching Applications • Small package • Low on resistance : Ron = 0.8 Ω max (@VGS = 4 V) Ron = 1.2 Ω max (@VGS = 2.5 V) • Low gate threshold voltage Absolute Maximum Rati |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 高速开关应用 •小型封装 •低导通电阻RON =0.8Ω最大（@ VGS=4 V） 罗恩= 1.2Ω最大（@VGS= 2.5 V） •低栅极阈值电压 绝对最大慧慧 |
