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SST108 JFET N-Channel 25v 80mA SOT-23 marking 18 low leakage current:20 pA
最大源漏极电压Vds Drain-Source Voltage | 25v |
栅源极击穿电压V(BR)GS Gate-Source Voltage | -25v |
漏极电流(Vgs=0V)IDSS Drain Current | 80ma |
关断电压Vgs(off) Gate-Source Cut-off Voltage | -3~-10v |
耗散功率Pd Power Dissipation | 350mW/0.35W |
Description & Applications | •N–Channel JFETs •Low On-Resistance: J108 <8 •Fast Switching—tON: 4 ns •Low Leakage: 20 pA •Low Capacitance: 11 pF •Low Insertion Loss |
描述与应用 | •N沟道JFETs •低导通电阻:J108<8 •快速开关吨:4纳秒 •低漏电流:20 pA的 •低电容:11 pF的 •低插入损耗 |