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SST3904 NPN Transistors(BJT) 60V 200mA/0.2A 300MHz 100~300 300mV/0.3V SOT-23/SC-59/SMT3 marking R1A
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流IC Collector Current(IC) | 200mA/0.2A |
| 截止频率fT Transtion Frequency(fT) | 300MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 300mV/0.3V |
| 耗散功率Pc Power Dissipation | 200mW/0.2W |
| Description & Applications | Features •NPN General Purpose Transistor •BVCEO > 40V (IC = 1mA) •Complements the UMT3906 / SST3906 / MMST3906 / 2N3906. |
| 描述与应用 | 特点 •NPN通用晶体管 •BVCEO>40V（IC=1MA） 补充UMT3906/ SST3906/ MMST3906/2N3906。 |
