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STD2NB60T4 MOSFET N-Channel 600V 2.6A TO-252/D-PAK marking D2NB60 fast switch/low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | 600V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
| 最大漏极电流Id Drain Current | 2.6A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 3.3Ω/Ohm @1.6A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 3-5V |
| 耗散功率Pd Power Dissipation | 50W |
| Description & Applications | TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED |
| 描述与应用 | 典型的RDS（on）=3.3Ω 非常高的dv/ dt能力 100％雪崩测试 非常低的固有电容 栅极电荷最小化 |
