STD2NB60T4 MOSFET N-Channel 600V 2.6A TO-252/D-PAK marking D2NB60 fast switch/low on-resistance|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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STD2NB60T4 MOSFET N-Channel 600V 2.6A TO-252/D-PAK marking D2NB60 fast switch/low on-resistance

Model：STD2NB60T4
Mark / screen / code / typing：D2NB60
Manufacturer：
Date Code：05+
Package：TO-252/D-PAK
Standard Package：2500
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	600V
最大栅源极电压Vgs(±) Gate-Source Voltage	30V
最大漏极电流Id Drain Current	2.6A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance	3.3Ω/Ohm @1.6A,10V
开启电压Vgs（th） Gate-Source Threshold Voltage	3-5V
耗散功率Pd Power Dissipation	50W
Description & Applications	TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
描述与应用	典型的RDS（on）=3.3Ω 非常高的dv/ dt能力 100％雪崩测试非常低的固有电容栅极电荷最小化

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