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STS2307 MOSFET P-Channel -20V -3A 0.07ohm SOT-23 marking S07 low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		12V
最大漏极电流Id
Drain Current		-3A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.07Ω @-4A,-4.5V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.5--1.5V
耗散功率Pd
Power Dissipation		1.25W
Description & ApplicationsF E ATUR E S S uper high dense cell design for low R DS (ON). R ugged and reliable. S OT-23 package.
描述与应用F E ATUR E S ŞUPER高密度电池设计低R DS ŗugged可靠。 S OT-23封装
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