Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
STS2307 MOSFET P-Channel -20V -3A 0.07ohm SOT-23 marking S07 low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | -3A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.07Ω @-4A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.5--1.5V |
| 耗散功率Pd Power Dissipation | 1.25W |
| Description & Applications | F E ATUR E S S uper high dense cell design for low R DS (ON). R ugged and reliable. S OT-23 package. |
| 描述与应用 | F E ATUR E S ŞUPER高密度电池设计低R DS ŗugged可靠。 S OT-23封装 |
