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TBB1004DMTL Complex FET 6V/6V 21mA/24mA SOT-363/SC70-6/CMPAK-6 marking DM VHF/UHFRF amplifier
| 最大源漏极电压Vds Drain-Source Voltage | 6V/6V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 6V/6V |
| 最大漏极电流Id Drain Current | 21mA/24mA |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | mΩ@ VGS = -V, ID = -mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | V |
| 耗散功率Pd Power Dissipation | 250mW/0.25W |
| Description & Applications | Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. • Suitable for World Standard Tuner RF amplifier. • Very useful for total tuner cost reduction. • Withstanding to ESD; Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. • Provide mini mold packages; CMPAK-6 |
| 描述与应用 | 双床内置偏置电路MOS FET的IC VHF/ UHF射频放大器 特点 •小SMD封装CMPAK-6内置双BBFET;要降低零部件的成本与PC板空间。 •适用于世界标准调谐器RF放大器。 •总的调谐器成本降低非常有用的。 •耐ESD;内置ESD吸收二极管。承受高达200V在C = 200pF，Rs = 0条件。 •提供微型模具包CMPAK-6 |
