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Integrated Circuit（IC） NAND gate TC7W00FK US8 marking W00
| 逻辑类型 Logic Type | 与非门 NAND Gate |
| 电路数 Number of Circuits | 2 |
| 输入数 Number of Inputs | 2 |
| 电源电压Vcc Voltage - Supply | 2v~6v |
| 静态电流Iq Current - Quiescent (Max) | 1µA |
| 输出高，低电平电流 Current - Output High, Low | -5.2mA,5.2mA |
| 低逻辑电平 Logic Level - Low | 0.5V~1.8V |
| 高逻辑电平 Logic Level - High | 1.5V~4.2V |
| 传播延迟时间@Vcc，CL Max Propagation Delay @ V, Max CL | 13nS @ 6V，50pF |
| Description & Applications | DUAL 2-INPUT NAND GATE ;High Speed : tpd = 6ns (typ.) at VCC = 5V • Low power dissipation : ICC = 1μA (max) at Ta = 25°C • High noise immunity : VNIH = VNIL = 28% VCC (min) • Output drive capability : 10 LSTTL Loads • Symmetrical Output Impedance : |IOH| = IOL= 4mA (min) • Balanced propagation delays : tpLH ≒ tpHL • Wide operating voltage range : VCC = 2 to 6 V |
| 描述与应用 | 双2输入与非门;高速：TPD =6ns的VCC = 5V时（典型值） •低功耗：ICC=1μA（最大值）在Ta= 25°C •高抗干扰性：VNIH= VNIL=28％VCC （分钟） •输出驱动能力：10输入通道负载 •对称的输出阻抗：| IOH|：IOL=4毫安（分钟） •平衡传输时延：TPLH≒TPHL •宽工作电压范围：VCC=2到6 V |
