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TM2301N MOSFET P-Channel -20V -2.3A 0.095ohm SOT-23 marking T21

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
-2.3A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.095Ω @-2.8A,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.45V
耗散功率Pd
Power Dissipation
1.25W
Description & ApplicationsFeatures Advanced trench process technology High density cell design for ultra low on-resistance
描述与应用先进沟道工艺技术 高密度电池设计超低导通电阻
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