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TN2540N8 MOSFET N-Channel 360mA/0.36A SOT-89 marking TN50E fast switch/low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 360mA/0.36A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 4.0Ω/Ohm @250mA,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-2.0V |
| 耗散功率Pd Power Dissipation | 1.6W |
| Description & Applications | Low threshold — 2.0V max. High input impedance Low input capacitance — 125pF max. Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices |
| 描述与应用 | 低门槛 - 2.0V最大。 高输入阻抗 低输入电容 - 125pF最大。 快速开关速度 低导通电阻 无二次击穿低输入和输出泄漏 互补N和P沟道器件 |
