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TN2540N8 MOSFET N-Channel 360mA/0.36A SOT-89 marking TN50E fast switch/low on-resistance

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Product description
最大源漏极电压Vds Drain-Source Voltage
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current360mA/0.36A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance4.0Ω/Ohm @250mA,4.5V
开启电压Vgs(th) Gate-Source Threshold Voltage0.5-2.0V
耗散功率Pd Power Dissipation1.6W
Description & ApplicationsLow threshold — 2.0V max. High input impedance Low input capacitance — 125pF max. Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Complementary N- and P-channel devices
描述与应用低门槛 - 2.0V最大。 高输入阻抗 低输入电容 - 125pF最大。 快速开关速度 低导通电阻 无二次击穿低输入和输出泄漏 互补N和P沟道器件
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