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TPC6003 MOSFET N-Channel 30V 6A SOT-163/SOT23-6/VS-6 marking S2D fast switch/low on-resistance

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Product description
最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current6A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.024Ω/Ohm @3A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage1.3-2.5V
耗散功率Pd Power Dissipation2.2W
Description & ApplicationsNotebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 7 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
描述与应用笔记本电脑应用 便携式设备的应用 低漏源导通电阻RDS(ON)= 19mΩ(典型值) 高正向转移导纳:| YFS|=7 S(典型值) 低漏电流:IDSS= 10μA(最大值)(VDS= 30 V) 增强模型:VTH =1.3〜2.5 V(VDS=10 V,ID= 1毫安)
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