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TPC6104 MOSFET P-Channel -20V -5.5A 0.033ohm SOT-163 marking S3D portable equipment application low leakage current
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | -5.5A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.033Ω @-2.8A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.5--1.2V |
| 耗散功率Pd Power Dissipation | 2.2W |
| Description & Applications | Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.) High forward transfer admittance: |Yfs| = 8.2 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement-model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA) |
| 描述与应用 | 笔记本电脑应用 便携式设备的应用 低漏源导通电阻RDS（ON）= 48mΩ（典型值） 高正向转移导纳：| YFS|= 8.2 S（典型值） 低漏电流：IDSS= -10μA（最大）（VDS=-20 V） 增强模式：VTH =-0.5至-1.2 V（VDS= -10 V，ID= -200μA） |
