Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
TPCT4202 Complex FET 30V 6A FR-4 marking 202 low Rds
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 6A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 38mΩ@ VGS = 4.5V, ID = 3000mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5~1.2V |
| 耗散功率Pd Power Dissipation | 510mW/0.51W |
| Description & Applications | Lithium lon Battery applications Lead(Pb)-Free small footprint due to small and thin package low drain source ON resistance :Rss(ON)=30.5mΩ(typ.) Low leakage current :Isss=10uA(max)(Vds=30V) Enhancement mode:Vth=0.5~12V(Vss=10V,Is=200uA) Common drain |
| 描述与应用 | 锂离子电池应用 铅（以Pb计）免费 由于占地面积小，小而薄的包装 低漏源导通电阻：RSS（ON）=30.5mΩ（典型值） 低漏电流：ISSS=10uA的（最大）（VDS =30V） 增强模式：VTH =0.5〜12V（VSS= 10V，=200uA电流） 常见的漏 |
