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UMF6N FET+BJTComplex FET 30V -15V marking F6 SOT-363 power management circuit

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Product description
最大源漏极电压Vds
Drain-Source Voltage
MOSFET N-Channel
最大栅源极电压Vgs(±)
Gate-Source Voltage
30V
最大漏极电流Id
Drain Current
20V
源漏极导通电阻Rds
Drain-Source On-State Resistance
100mA/0.1A
开启电压Vgs(th)
Gate-Source Threshold Voltage
8000mΩ@ VGS = 4V, ID = 10mA
耗散功率Pd
Power Dissipation
20ms@VDS=3V,Id=10mA
Description & Applications
描述与应用0.8~1.5V
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