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UMX18 NPN+NPN Complex Bipolar Transistor 15V 500mA 270~680 SOT-363/UMT6/SC-88 marking X18 switch and digital circuit application

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)15V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)12V
集电极连续输出电流IC Collector Current(IC)500mA
Q1基极输入电阻R1 Input Resistance(R1)320MHz
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)270~680
Q1电阻比(R1/R2) Q1 Resistance Ratio90mV
Q2基极输入电阻R1 Input Resistance(R1)150mW
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)Features • General purpose transistors(dual transistors) • Two 2SC5585 chips in a EMT or UMT package. • Mounting possible with EMT3 or UMT3 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half
Q2电阻比(R1/R2) Q2 Resistance Ratio特点 •通用晶体管(双晶体管) •两个2SC5585一个EMT或UMT包的芯片。 •安装EMT3或UMT3自动的安装机器可能。 •晶体管元素是独立的,消除干扰。 •安装成本和面积可减少一半
直流电流增益hFE DC Current Gain(hFE)
截止频率fT Transtion Frequency(fT)
耗散功率Pc Power Dissipation
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