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UMZ1 NPN+PNP Complex Bipolar Transistor 60V/-60V 150mA/-150mA 120~560 SOT-363/UMT6/SC-88 marking Z1 switch and digital circuit application
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V/-60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V/-50V |
集电极连续输出电流IC Collector Current(IC) | 150mA/-150mA |
截止频率fT Transtion Frequency(fT) | 180MHz/140MHz |
直流电流增益hFE DC Current Gain(hFE) | 120~560 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 400mV/-500mV |
耗散功率Pc Power Dissipation | 150mW |
Description & Applications | Features • General purpose transistor (dual transistors) • Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. • Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. • Transistor elements are independent, eliminating interference. • Mounting cost and area can be cut in half |
描述与应用 | 特点 •通用晶体管(双晶体管) •一个2SA1037AK芯片和2SC2412K芯片在EMT或UMT或SMT封装。 •安装可能与EMT3或UMT3或SMT3自动安装机器。 •晶体管元素是独立的,消除干扰。 •安装成本和面积可减少一半 |