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UMZ8N PNP+NPN Complex Bipolar Transistor -15V/60V -500mA/150mA 270~680/120~560 SOT-363/UMT6/SC-88 marking Z8 switch and digital circuit application
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -15V/60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -12V/50V |
集电极连续输出电流IC Collector Current(IC) | -500mA/150mA |
截止频率fT Transtion Frequency(fT) | 260MHz/180MHz |
直流电流增益hFE DC Current Gain(hFE) | 270~680/120~560 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | -100mV/400mV |
耗散功率Pc Power Dissipation | 150mW |
Description & Applications | Features • Power management(dual transistors) • Both a 2SA2018 chip and 2SC2412K chip in a EMT or UMT package. |
描述与应用 | 特点 •电源管理(双晶体管) •两个一个2SA2018芯片和2SC2412K芯片的一个EMT或UMT包。 |