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UPA1731G MOSFET P-Channel -30V 1mA 13mohm SO8 marking A1731 low on-resistance power management application
| 最大源漏极电压Vds Drain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | -1A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 13mΩ@ VGS = -10V, ID = -5A |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -1.0~-2.5V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | DESCRIPTION The uPA1731 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES · Low on-resistance RDS(on)1 = 10.3 mW TYP. (VGS = –10 V, ID = –5.0 A) RDS(on)2 = 14.6 mW TYP. (VGS = –4.5 V, ID = –5.0 A) RDS(on)3 = 16.5 mW TYP. (VGS = –4.0 V, ID = –5.0 A) · Low Ciss : Ciss =2600 pF TYP. · Built-in G-S protection diode · Small and surface mount package (Power SOP8) |
| 描述与应用 | 说明 的uPA1731是P沟道MOS场效应晶体管 设计电源管理应用 笔记本电脑锂离子电池保护电路。 特点 ·低导通电阻 RDS（on）1 =10.3 mW的典型。 （VGS=-10V，ID= -5.0） RDS（on）2 =14.6 mW的典型。 （VGS= -4.5 V，ID= -5.0） RDS（on）3=16.5 mW的典型。 （VGS= -4.0 V，ID= -5.0） ·低CISS：西塞=2600 PF TYP。 ·内置G-S的保护二极管 ·小和表面贴装封装（电源SOP8） |
