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UPA652TT-E1 MOSFET P-Channel -20V 2A 0.0235ohm SOT-363 marking WF 2.5V drive low on-resistance

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
12V
最大漏极电流Id
Drain Current
-2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.0235Ω @-1A,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.5--1.5V
耗散功率Pd
Power Dissipation
200mW/0.2W
Description & ApplicationsFEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 294 mΩ MAX. (VGS = −4.5 V, ID = −1.0 A) RDS(on)2 = 336 mΩ MAX. (VGS = −4.0 V, ID = −1.0 A) RDS(on)3 = 514 mΩ MAX. (VGS = −2.5 V, ID = −0.5 A)
描述与应用•2.5 V驱动器可用 •低通态电阻 的RDS(on)1 =294mΩ最大。(VGS= -4.5 V,ID=-1.0 A) 的RDS(on)= 336mΩ最大。 (VGS= -4.0 V,ID=-1.0 A) 的RDS(on)= 514mΩ最大。 (VGS= -2.5 V,ID=-0.5 A)
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