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UPA836TC NPN+NPN Complex Bipolar Transistor 9V 30mA/100mA 75~150/80~160 SOT-563 marking V47 switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
Q1/Q2=9V/9V |
|
V(BR) CEO Collector-Emitter Voltage |
Q1/Q2=6V/6V |
| Collector Current(IC) | Q1/Q2=30MA/100MA |
| Transtion Frequency(fT) | Q1/Q2=12GHZ/9GHZ |
| DC Current Gain(hFE) | Q1/Q2=75~150/80~160 |
|
VCE (sat) Collector-Emitter Saturation Voltage |
Q1/Q2= |
| Power Dissipation （Pd） | |
| Description & Applications | NPN SILICON EPITAXIAL TWIN TRANSISTOR
• LOW HEIGHT PROFILE:
Just 0.55 mm high
• FLAT LEAD STYLE:
Reduced lead inductance improves electrical
performance
• TWO DIFFERENT DIE TYPES:
Q1 - Ideal oscillator transistor
Q2 - Ideal buffer amplifier transistor
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| Technical Documentation Download | Read Online |
