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UPA862TD NPN+NPN Complex Bipolar Transistor 9V 30mA/100mA 110/112 SOT-763 marking Y switch and digital circuit application
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V(BR) CBO Collector-Base Voltage |
Q1/Q2=9V / 9V |
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V(BR) CEO Collector-Emitter Voltage |
Q1/Q2=6V / 5.5V |
| Collector Current(IC) | Q1/Q2=30MA / 100MA |
| Transtion Frequency(fT) | Q1/Q2=12GHZ / 6.5GHZ |
| DC Current Gain(hFE) | Q1/Q2=75~150 / 100~145 |
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VCE (sat) Collector-Emitter Saturation Voltage |
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| Power Dissipation （Pd） | 210MW |
| Description & Applications | NPN SILICON RF TRANSISTOR
LOW VOLTAGE, LOW CURRENT OPERATION
TWO DIFFERENT DIE TYPES:
Q1 - Ideal buffer amplifier transistor
Q2 - Ideal oscillator transistor
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| Technical Documentation Download | Read Online |
