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US6J2 Complex FET -20V 10A SOT-363/SC70-6/UMT6 marking J02 2.5Vlow voltage drive
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 10A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 390mΩ@ VGS = -4.5V, ID = -1000mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.7~-2.0V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | Small switching (−20V, −1A) ●Features 1) Two Pch MOSFET transistors in a single TUMT6 package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (2.5V) makes this device ideal for portable equipment. 5) Easily designed drive circuits. ●Applications switch |
| 描述与应用 | 小开关（-20V，-1A） ●产品特点 1）两个P沟道MOSFET晶体管在一个单一的TUMT6 包。 2）安装成本和面积可减少一半。 3）低导通电阻。 4）低电压驱动（2.5V）使该器件理想用于 便携式设备。 5）轻松设计的驱动电路。 ●应用范围 开关 |
