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UTC8050SECB NPN Transistors(BJT) 30V 700mA/0.7A 100MHz 110 500mV/0.5V SOT-23/SC-59 marking D9D low voltagelarge current
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流IC Collector Current(IC) | 700mA/0.7A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 110 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率Pc Power Dissipation | 1W |
| Description & Applications | LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complementary to UTC 8550S |
| 描述与应用 | 低电压大电流 小信号NPN 晶体管 *集电极电流高达700mA *集电极 - 发射极电压高达20 V |
