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V30324-T1-E3 Complex FET 20V 700mA/0.7A SOT-363/SC70-6 marking PAB power MOSFET
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 700mA/0.7A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 385mΩ@ VGS = 4.5V, ID = 660mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6~1.5V |
| 耗散功率Pd Power Dissipation | 300mW/0.3W |
| Description & Applications | Dual N-Channel 20-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFETS: 2.5 V Rated |
| 描述与应用 | 双N沟道20-V（D-S）的MOSFET 特点 •TrenchFET®功率MOSFET：2.5 V额定 |
