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VN2110K1 MOSFET N-Channel 300mA/0.3A SOT-23/SC-59 marking N1AD fast switch/low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 300mA/0.3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 4.0 @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-2.4V |
| 耗散功率Pd Power Dissipation | 1W |
| Description & Applications | Commercial and Military versions available Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain |
| 描述与应用 | 商用和军用版本 无二次击穿 低功率驱动器的要求 易于并联 低连续供墨系统 和快速开关速度 高输入阻抗，高增益 |
