Scavenging browsing Mobile
Hot Search: SSM3K35MFV SSM3J36MFV 2SK3376TT-B
X2SA1774 PNP transistors(BJT) -60V -100mA/-0.1A 140MHz 120~560 -500mV/-0.5V SOT-523/SC-75 marking XC amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
截止频率fT Transtion Frequency(fT) | 140MHz |
直流电流增益hFE DC Current Gain(hFE) | 120~560 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率Pc PoWer Dissipation | 150mW/0.15W |
Description & Applications | PNP Silicon General Purpose Amplifier Transistor Features • Reduces Board Space • High hFE, 210−460 (typical) • Low VCE(sat) • Available in 8 mm, 7−inch/3000 Unit Tape and Reel • Pb−Free Packages |
描述与应用 | PNP硅通用晶体管放大器 特点 •缩小板级空间 •高HFE,210-460(典型值) •低VCE(SAT) •可在8毫米,7-inch/3000组带和卷轴 •无铅封装 |