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XN1116 PNP+PNP Complex Bipolar Digital Transistor -50V -0.1A R1=4.7KΩ HEF=160~460 SOT153 MARKING 7N
|
V(BR) CBO Collector-Base Voltage |
-50V |
|
V(BR) CEO Collector-Emitter Voltage |
-50V |
| Collector Current(IC) | 100MA |
| Input Resistance(R1) | 4.7KΩ |
| Base-Emitter Resistance(R2) | |
| Base-Emitter Input Resistance Ratio (R1/R2) | |
| DC Current Gain(hFE) | 160~460 |
| Transtion Frequency(fT) | 80MHZ |
| Power Dissipation （Pd） | 300MW/0.3W |
| Description & Applications | Silicon PNP epitaxial planer transistor
For switching/digital circuits
UN1116 × 2 elements
|
| Technical Documentation Download | Read Online |
