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XN1C301 PNP+NPN Complex Bipolar Transistor -60V/60V -100mA/100mA 160~460 SOT-153/SC-74A marking 4R switch and digital circuit application

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-60V/60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-50V/50V
集电极连续输出电流IC Collector Current(IC)-100mA/100mA
截止频率fT Transtion Frequency(fT)80MHz/150MHz
直流电流增益hFE DC Current Gain(hFE)160~460
管压降VCE(sat) Collector-Emitter Saturation Voltage-300mA/100mA
耗散功率Pc Power Dissipation300mW
Description & ApplicationsFeatures • Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) • Two elements incorporated into one package.(Tr1 base is connected to Tr2 emitter.) • Reduction of the mounting area and assembly cost by one half. Applications • For general amplification
描述与应用特点 •硅外延刨床PNP晶体管(TR1)硅NPN外延刨床晶体管的(TR2) •两个要素纳入一包装(TR1基地TR2发射器连接到)。 •减少安装面积和汇编一半的费用。 应用 •对于一般的放大
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