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XN4212 NPN+NPN Complex Bipolar Digital Transistor 50V 100mA R1=R2=22KΩ HEF=60 300mW/0.3W SOT-163/SC-74/SOT23-6 marking 8R switching inverting interface driver circuit
| Collector-Base Voltage(VCBO) | 50V |
| Collector-Emitter Voltage(VCEO) | 50V |
| Collector Current(IC) | 100mA |
| Input Resistance(R1) | 22KΩ/Ohm |
| Base-Emitter Resistance(R2) | 22KΩ/Ohm |
| (R1/R2) Resistance Ratio | 1 |
| DC Current Gain(hFE) | 60 |
| Transtion Frequency(fT) | 150MHz |
| Power Dissipation | 300mW/0.3W |
| Description & Applications |
Silicon NPN epitaxial planer transistor
For switching/digital circuits
UNR1212 (UN1212)× 2
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