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XN4601 NPN+PNP Complex Bipolar Transistor 60V/-60V 100mA/-100mA 160~460 SOT-163/SC-74 marking 5C switch and digital circuit application
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | Q1/Q2=60V/-60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | Q1/Q2=50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) | Q1/Q2=100mA/-100mA |
| 截止频率fT Transtion Frequency(fT) | Q1/Q2=150MHz/80MHz |
| 直流电流增益hFE DC Current Gain(hFE) | Q1/Q2=160~460/160~460 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | Q1/Q2=100mV/-300mV |
| 耗散功率Pc Power Dissipation | 300mW |
| Description & Applications | Features • Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) • Two elements incorporated into one package. • Reduction of the mounting area and assembly cost by one half. Applications • For general amplification 2SD601A+2SB709A |
| 描述与应用 | 特点 •NPN硅外延的刨床晶体管（TR1）硅PNP外延刨床晶体管的（TR2） •两个要素纳入一包装。 •减少安装面积和汇编一半的费用。 应用 •对于一般的放大 2SD601A+2SB709A |
