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XN6216 NPN+NPN Complex Bipolar Digital Transistor 50V 0.1A R1=4.7KΩ HEF=160~460 300mW/0.3W SOT-163/SC-74/SOT23-6 marking 8Y switching inverting interface driver circuit
V(BR) CBO Collector-Base Voltage |
50V |
V(BR) CEO Collector-Emitter Voltage |
50V |
Collector Current(IC) | 100MA |
Input Resistance(R1) | 4.7KΩ |
Base-Emitter Resistance(R2) | |
Base-Emitter Input Resistance Ratio (R1/R2) | |
DC Current Gain(hFE) | 160~460 |
Transtion Frequency(fT) | 150MHZ |
Power Dissipation (Pd) | 300MW/0.3W |
Description & Applications | Silicon NPN epitaxial planer transistor
For switching/digital circuits
UN1216 × 2
|
Technical Documentation Download | Read Online |