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XP1110 PNP+PNP Complex Bipolar Digital Transistor -50V -100mA R1=47KΩ HEF=160~460 150mW/0.15W SOT-353/SC-88A/SC70-5 marking AD switching inverting interface driver circuit
V(BR) CBO Collector-Base Voltage |
-50V |
V(BR) CEO Collector-Emitter Voltage |
-50V |
Collector Current(IC) | -100MA |
Input Resistance(R1) | 47KΩ |
Base-Emitter Resistance(R2) | |
Base-Emitter Input Resistance Ratio (R1/R2) | |
DC Current Gain(hFE) | 160~460 |
Transtion Frequency(fT) |
80mhz |
Power Dissipation (Pd) | 150MW |
Description & Applications | Silicon PNP epitaxial planer transistor
For switching/digital circuits
UNR1110(UN1110) × 2
|
Technical Documentation Download | Read Online |