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XP6501 NPN+NPN Complex Bipolar Transistor 60V 100mA HEF=160~460 SOT-363/SC-88 marking 5N switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
60V |
|
V(BR) CEO Collector-Emitter Voltage |
50V |
| Collector Current(IC) | 100MA/0.1A |
| Transtion Frequency(fT) | 150MHZ |
| DC Current Gain(hFE) | 160~460 |
|
VCE (sat) Collector-Emitter Saturation Voltage |
0.5V |
| Power Dissipation （Pd） | 150MW/0.15W |
| Description & Applications |
Silicon NPN epitaxial planer transistor
For general amplification
■ Features
● Two elements incorporated into one package.
● Reduction of the mounting area and assembly cost by one half.
■ Basic Part Number of Element
● 2SD0601A(2SD601A) × 2 elements
|
| Technical Documentation Download | Read Online |
