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XP6501 NPN+NPN Complex Bipolar Transistor 60V 100mA HEF=160~460 SOT-363/SC-88 marking 5N switch and digital circuit application

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Product description

V(BR) CBO

Collector-Base Voltage

 60V

V(BR) CEO

Collector-Emitter Voltage

 50V
Collector Current(IC)  100MA/0.1A
Transtion Frequency(fT)  150MHZ
DC Current Gain(hFE)  160~460

VCE (sat)

Collector-Emitter Saturation Voltage

 0.5V
Power Dissipation (Pd)  150MW/0.15W
Description & Applications
Silicon NPN epitaxial planer transistor
For general amplification
■ Features
● Two elements incorporated into one package.
● Reduction of the mounting area and assembly cost by one half.
■ Basic Part Number of Element
● 2SD0601A(2SD601A) × 2 elements
Technical Documentation Download Read Online
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