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PBSS5350T PNP transistors(BJT) -50V -2A 100MHz 200 -390mV/-0.39V SOT-23/SC-59 marking ZD Linear voltage regulation/battery chargers/DC-DCconvertor

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
-2A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
200
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-390mV/-0.39V
耗散功率Pc
PoWer Dissipation
300mW/0.3W
Description & Applications30 V low VCE(sat) PNP transistor FEATURES • Low collector-emitter saturation voltage VCE(sat) and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat generation. • NPN complement: PBSS4350T. APPLICATIONS • Power management applications • Low and medium power DC/DC convertors • Supply line switching • Battery chargers • Linear voltage regulation with low voltage drop-out
描述与应用30伏的低VCE(sat)的PNP晶体管 特点 •低集电极 - 发射极饱和电压VCE(饱和)和相应的低RCEsat •高集电极电流能力 •高集电极电流增益 •由于产生的热量减少,提高了效率。 •NPN补充:PBSS4350T。 应用 •电源管理应用 •低功率和中功率DC/ DC转换器 •供电线路开关 •电池充电器 •线性电压调节,低电压降
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