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FDC640P MOSFET P-Channel -20V -4.5A 0.037ohm SOT-163 marking 640
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | -4.5A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.037Ω @-4.5A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.6--1.5V |
| 耗散功率Pd Power Dissipation | 1.6W |
| Description & Applications | • Rugged gate rating (±12V). • High performance trench technology for extremely low RDS(ON) • SuperSOT TM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). |
| 描述与应用 | •坚固的门评级（±12V）。 •高性能沟道技术极低的RDS（ON） •的SuperSOT TM-6包装：占地面积小（小72％ 比标准的SO-8）;低调（1mm厚） |
