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BCW30T PNP transistors(BJT) -32V -100mA/-0.1A 215~500 -300mV/-0.3V SOT-23/SC-59 marking C2

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−32V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−32V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
直流电流增益hFE
DC Current Gain(hFE)
215~500
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-300mV/-0.3V
耗散功率Pc
PoWer Dissipation
300mW/0.3W
Description & ApplicationsGeneral Purpose transistor
描述与应用通用晶体管
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