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NTA4153NT1G MOSFET N-Channel 20V 915mA/0.915A SOT-523/SC-75 marking TR low power dissipation/low RDS
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 6V |
| 最大漏极电流Id Drain Current | 915mA/0.915A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.23Ω/Ohm @600mA,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.45-1.1V |
| 耗散功率Pd Power Dissipation | 300mW/0.3W |
| Description & Applications | Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Load/Power Switches • Power Supply Converter Circuits • Battery Management • Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc. Features • Low RDS(on) Improving System Efficiency • Low Threshold Voltage, 1.5 V Rated • ESD Protected Gate • Pb−Free Packages are Available |
| 描述与应用 | 小信号MOSFET 20 V，915 mA时，单N沟道 具有ESD保护，SC-75和SC-89 负载/功率开关 •电源转换器电路 •电池管理 •便携设备，如手机，掌上电脑，数码相机，寻呼机等 •低的RDS（on） 提高系统效率 •低阈值电压，1.5 V额定 •ESD保护门 •无铅包可用 |
