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HAT2173H N MOSFET 100V 25A LFPAK High speed switching Low drive current
| Drain-Source Voltage （Vds） | 100V |
|
Vgs(±) Gate-Source Voltage |
20V |
| Drain Current （Id） | 25A |
| Drain-Source On-State （Rds） | ID = 12.5 A, VGS = 10 V RDS=12~15mΩ
ID = 12.5 A, VGS = 8 V RDS=13~17.5mΩ
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|
Vgs （th） Gate-Source Threshold Voltage |
|
| Power dissipation （Pd） | 30W |
| Description & Applications | Silicon N Channel Power MOS FET
Power Switching
• High speed switching
• Capable of 8 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 12 mΩ typ. (at VGS = 10 V)
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