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BFP196R NPN Transistors(BJT) 15V 100mA/0.1A 7.5Ghz 50~200 SOT-143 marking RI low noise,low distortion wideband antenna amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 15V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 12V |
集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
截止频率fT Transtion Frequency(fT) | 7.5Ghz |
直流电流增益hFE DC Current Gain(hFE) | 50~200 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | |
耗散功率Pc Power Dissipation | 700mW/0.7W |
Description & Applications | NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • fT = 7.5GHz F = 1.5 dB at 900MHz |
描述与应用 | NPN硅RF晶体管 •低噪声,低失真宽带天线放大器和电信系统高达1.5GHz的集电极电流从20mA到80mA •功率放大器DECT和PCN系统 •FT =的7.5GHz F =1.5dB(在900MHz时) |