Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
SI1033X-T1 Complex FET -20V -145mA/-0.145A SOT-563 marking KA/KEV ESD protection power converter
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | -5V |
| 最大漏极电流Id Drain Current | -145mA/-0.145A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 20Ω@ VGS = -1.5V, ID = -30mA |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.4~-1.2V |
| 耗散功率Pd Power Dissipation | 250mW/0.25W |
| Description & Applications | P-Channel 20-V (D-S) MOSFET FEATURES High-Side Switching Low Threshold: 0.9 V (typ) Fast Switching Speed: 45 ns (typ) 1.5-V Operation Gate-Source ESD Protection APPLICATIONS Drivers: Relays, Solenoids, Lamps,Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers |
| 描述与应用 | P沟道20-V（D-S）的MOSFET 特点 高侧开关？ 低阈值：0.9 V（典型值） 开关速度快：45 ns（典型值） 1.5-V操作 门源ESD保护 应用 驱动：继电器，螺线管，灯，锤子，显示器，记忆 电池供电系统 电源转换器电路 负载/功率开关手机，寻呼机 |
