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SI1900DL-T1-E3 Complex FET 30V 590mA/0.59A SOT-363/SC70-6 marking PBS

Price (excluding freight):
Batches(PCS):
$0.162
≤99
$0.146
≤499
$0.122
≤999
$0.105
≤2999
$0.097
FCL

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Product description
最大源漏极电压Vds
Drain-Source Voltage
30V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
590mA/0.59A
源漏极导通电阻Rds
Drain-Source On-State Resistance
700mΩ@ VGS =4.5V, ID =200mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
1V
耗散功率Pd
Power Dissipation
270mW/0.27W
Description & ApplicationsDual N-Channel 30-V (D-S) MOSFET
描述与应用双N沟道30-V(D-S)的MOSFET
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