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KMPSA94/P PNP transistors（BJT） -400V -300mA/-0.3A 50~300 -500mV/-0.5V TO92 marking KMPSA94 high breakdown voltage
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -400V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -400V |
| 集电极连续输出电流IC Collector Current(IC) | −300mA/-0.3A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | 50~300 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率Pc PoWer Dissipation | 25mW |
| Description & Applications | PNP epitaxial planar transistor High voltage application Feature High breakdown voltage Complementary to MPSA44 |
| 描述与应用 | 硅PNP外延 PNP外延平面晶体管 高电压施加 特点 高击穿电压 互补MPSA44 |
