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KRA556E PNP+PNP Complex Bipolar Digital Transistor -50V -100mA 200mW/0.2W R1=4.7KΩ R2=47KΩ SOT-553/TESV marking PF switching inverting interface driver circuit
|
V(BR) CBO Collector-Base Voltage |
-50V |
|
V(BR) CEO Collector-Emitter Voltage |
-50V |
| Collector Current(IC) | -100MA/-0.1A |
| Input Resistance(R1) | 4.7KΩ |
| Base-Emitter Resistance(R2) | 47KΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | 0.1 |
| DC Current Gain(hFE) | |
| Transtion Frequency(fT) | 200MHZ |
| Power Dissipation （Pd） | 0.2W |
| Description & Applications | EPITAXIAL PLANAR PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
·With Built-in Bias Resistors.
·Simplify Circuit Design.
·Reduce a Quantity of Parts and Manufacturing Process.
·High Packing Density.
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| Technical Documentation Download | Read Online |
