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2SK848-TD MOSFET N-Channel 250V 500mA/0.5A SOT-89 marking KA fast switch/low on-resistance
最大源漏极电压Vds Drain-Source Voltage | 250V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | 500mA/0.5A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 6Ω/Ohm @250mA,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.5-2.5V |
耗散功率Pd Power Dissipation | 1.5W |
Description & Applications | Very speed switching application Features Silicon N-Channel POWER MOS FET Very high-speed switching applications Low on resistance,very high-speed switching |
描述与应用 | 非常高速开关应用 特性 硅N沟道功率MOS FET 非常高速开关应用 低导通电阻,非常高的速度开关 |