SI2307BDS MOSFET P-Channel 0.061ohm SOT-23 marking L7 P沟道vertical DMOS|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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SI2307BDS MOSFET P-Channel 0.061ohm SOT-23 marking L7 P沟道vertical DMOS

Model：SI2307BDS
Mark / screen / code / typing：L7
Manufacturer：
Date Code：06+NOPB 06+NOPB
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage
最大栅源极电压Vgs(±) Gate-Source Voltage
最大漏极电流Id Drain Current
源漏极导通电阻Rds Drain-Source On-State Resistance	0.061Ω @-3.2A,-10V
开启电压Vgs（th） Gate-Source Threshold Voltage	2.1V
耗散功率Pd Power Dissipation	1.25W
Description & Applications	P-Channel 30-V (D-S) MOSFET P-Channel Vertical DMOS Macro Model (Subcircuit Model) Level 3 MOS
描述与应用	P沟道30-V（D-S）的MOSFET P沟道垂直DMOS 宏模型（子电路模型）级别3 MOS

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