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BFR93-GS08 NPN Transistors(BJT) 20V 40mA 5GHz 25~150 SOT-23/SC-59 marking R1 RF amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 20V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 12V |
集电极连续输出电流IC Collector Current(IC) | 40mA |
截止频率fT Transtion Frequency(fT) | 5GHz |
直流电流增益hFE DC Current Gain(hFE) | 25~150 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | |
耗散功率Pc Power Dissipation | 200mW/0.2W |
Description & Applications | NPN Silicon Planar RF Transistor Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features High power gain Low noise figure High transition frequency |
描述与应用 | NPN硅平面RF晶体管 应用 RF放大器高达GHz范围内,专为宽波段天线放大器。 特点 高功率增益 低噪声系数 高转换频率 |